Silicon carbide ceramic substrates (SiC)
Silicon carbide is a material with high hardness, durability and the ability to work at elevated temperatures (up to 600 C). In addition, it has high electrical strength and a large band gap (greater than that of pure silicon). This material is used both to increase the wear resistance of moving elements and as an armor material.
Specifications
|
Properties |
Type of SiC |
||
|
SiSiC (Reaction Bonded Silicon Carbide) |
SSiC (Direct Sintered Silicon Carbide |
||
|
Colour |
Black |
Blsck |
|
|
Bulk density |
г/см3 |
≥ 3,02 |
≥ 3,10 |
|
Flexural strength |
МПа |
≥ 250 |
≥ 400 |
|
Modulus of elasticity |
ГПа |
≥ 300 |
≥ 420 |
|
Coefficient of thermal expansion |
10-6 /°C |
4,5 |
4,1 |
|
Thermal conductivity |
Вт/м∙K |
45 |
74 |
|
Heat shock resistance |
°C |
400 |
300 |
|
Maximum operating temperature |
°C |
1380 |
1600 |
Application area
- high-voltage schottky diodes;
- n-mosfet transistors
- thyristors;
- creating LEDs;
- armor plates;
- creation of strengthening and wear-resistant elements;
- abrasive materials.