Aluminium nitride ceramic substrates (AlN)
The main advantage of substrates made on the basis of aluminum nitride (AlN) is the high thermal conductivity, varying in the range from 170 to 230 W/m*K. That is why AlN-based ceramics are used in cases where it is necessary to remove significant amounts of heat generated, for example, in cases where operating currents are units, tens of amperes. Also, AlN has a high purity of structure and chemical uniformity, which directly affects the uniformity of properties. Aluminum nitride is highly inert to the effects of almost all types of acids (with the exception of hot mineral species).
The products are made of ceramics based on aluminum nitride AlN according to the technical specifications 23.43.10.110-002-34576770-2016- DAYS.
Specifications
|
Properties |
Materials |
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AlN-170 |
AlN-200 |
AlN-230 |
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Colour |
gray |
gray |
brown |
|
|
Bulk density |
г/см3 |
≥ 3,20 |
≥ 3,20 |
≥ 3,30 |
|
Surface roughness Ra (grinding) |
мкм |
0,2 ~ 0,7 |
0,2 ~ 0,7 |
0,3 |
|
Surface roughness Ra (polished) |
мкм |
≤ 0,05 |
≤ 0,05 |
≤ 0,05 |
|
Механические характеристики |
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|
Flexural strength |
МПа |
≥ 380 |
≥ 380 |
≥ 350 |
|
Compressive strength |
МПа |
- |
- |
- |
|
Elastic modulus |
ГПа |
320 |
320 |
320 |
|
Vickers Hardness |
ГПа |
11 |
11 |
11 |
|
Fracture toughness |
Мпа*м^0,5 |
- |
- |
2,4
|
|
Physical properties |
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Coefficient of thermal expansion (40-300°C) |
10 -6 /°C |
2,0 ~ 3,0 |
2,0 ~ 3,0 |
4,6 |
|
Coefficient of thermal expansion (300-800 С) |
|
2,5 ~ 3,5 |
2,0 ~ 3,0 |
5,2 |
|
Thermal conductivity (25°C) |
Вт/м∙°K |
≥ 170 |
≥ 200 |
≥ 230 |
|
Specific heat capacity |
Дж/Кг∙°К |
720 |
720 |
720 |
|
Dielectric strength |
|
≥ 17 |
|
≥ 15 |
|
Volumetric resistance(25 С) |
|
≥ 1013 |
≥ 1013 |
≥ 1013 |
|
Dielectric constant (1 МГц) |
- |
8 ~ 10 |
8 ~ 10 |
8,5 |
|
Dielectric losses(1МГц, 25°C) |
∙10 -4 |
2 |
2 |
3 |
|
Sizes |
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Distance between scribing lines, мм |
|
1±0,05 |
1±0,05 |
1±0,05 |
|
Minimum hole diameter, мм |
|
0,1±0,05 |
0,1±0,05 |
0,2±0,05 |
|
Thickness, мм |
|
0,385 ~ 1,500 |
0,385 ~ 1,500 |
0,25 ~ 1,00 |
|
Thickness tolerance (min), мм |
|
± 0,03 |
± 0,03 |
±10%, не менее ±0,04 мм |
|
Dimensions (max), мм |
|
127 x 127 |
127 x 127 |
177,8 x 127 |
|
Dimensional tolerance (min), мм |
|
(+0,15 / -0,05) |
(+0,15 / -0,05) |
±1%, не менее ±0,1 мм |
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Technological properties |
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DBC technology |
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|
- |
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Thick-film technology |
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Thin-film technology |
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Application area
Ceramics made on the basis of aluminum nitride ALN has a fairly wide range of applications and will allow you to effectively solve problems, regardless of the level of complexity:
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a blank for ceramic printed circuit boards that require high reliability indicators;
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manufacturing of substrates for semiconductors;
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as a heat-absorbing element in LED circuits and high-power electronic devices;
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base for high-frequency resistors and as enclosures for various circuits;
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substrate for laser diodes, semiconductor crystals;
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for the manufacture of sensors and other devices operated in the most difficult conditions, etc.